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mrfe6vp5600-434 – NXP USA Inc.

Availability: In Stock

Disclaimer: The image displayed serves as a mere illustration and does not provide precise specifications. For accurate details, We recommend referring to the official product data sheet.

mrfe6vp5600-434

Note: Price can vary and may be different depending on market and demand.

$1,363.50 $1,186.25 -13%
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    maketronics-services

    100% new and original products

    maketronics-services

    Hassle-free returns

    maketronics-services

    Fast & responsive customer support

    maketronics-services

    Guaranteed worldwide delivery in 3 weeks**

    maketronics-services

    Quality assurance

    Product Details

    Detailed overview of the "mrfe6vp5600-434 – NXP USA Inc.", including features and unique attributes.

    Description MRFE6VP5600H REF BRD 434MHZ 600W
    Detailed Description - MRFE6VP5600H Transistor 434MHz Evaluation Board

     

    Product Attributes

    Key product specifications of "mrfe6vp5600-434 – NXP USA Inc." like material, dimensions, and weight.

    Type Description
    Category Development Boards, Kits, Programmers
    Evaluation Boards RF Evaluation and Development Kits, Boards
    Mfr NXP USA Inc.
    Series
    Package Bulk
    Product Status Active
    Type Transistor
    Frequency 434MHz
    For Use With/Related Products MRFE6VP5600H
    Supplied Contents Board(s)
    Base Product Number MRFE6

    Product Information

    Semiconductor Product Description: MRFE6VP5600-434

    The MRFE6VP5600-434 is a high-power RF semiconductor device designed for use in a wide range of applications, from industrial to commercial. This product stands out in the market due to its unique features and key benefits that set it apart from other similar products.

    Key Features:

    • Frequency Range: 400-450 MHz
    • Output Power: 600 Watts
    • Efficiency: 70%
    • Gain: 24 dB
    • Integrated ESD Protection

    Key Benefits:

    • High Power Output for Increased Range
    • Efficient Power Consumption for Energy Savings
    • High Gain for Improved Signal Quality
    • Integrated ESD Protection for Enhanced Reliability

    Applications:

    The MRFE6VP5600-434 is ideal for use in RF amplifiers, broadcast transmitters, radar systems, and other high-power RF applications. Its versatility and high performance make it a top choice for engineers and designers looking for a reliable semiconductor solution.

    Performance Advantages:

    With its high power output, efficiency, and gain, the MRFE6VP5600-434 outperforms other semiconductor devices in its class. Its integrated ESD protection also ensures long-term reliability and durability, making it a cost-effective solution for demanding applications.

    Whether youre a technical expert or a non-technical user, the MRFE6VP5600-434 offers unmatched performance and reliability for your RF applications. Trust in this semiconductor product to deliver exceptional results and meet your high-power RF needs with ease.

    Additional Info

    Others certifications, and compatible accessories information about "mrfe6vp5600-434 – NXP USA Inc." part.

    Attribute Description
    RoHS Status ROHS3 Compliant
    REACH Status REACH Unaffected
    ECCN EAR99
    HTS US8543.70.9860

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