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TRANS SJT 650V 4A TO257

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| PARAMETER | VALUE |
|---|---|
| Manufacturer | Navitas Semiconductor, Inc. |
| Package | Bulk |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 100 nA @ 600 V |
| Current Drain (Id) - Max | 10 A |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 600V |
| Resistance - RDS(On) | 425 mOhms |
| Power - Max | 47 W |
| Operating Temperature | 210°C |
| Mounting Type | Through Hole |
| Package / Case | TO-257-3 |
| Supplier Device Package | TO-257 |
Additional components from the same manufacturer
| Image | Part Number / Manufacturer | Description / Specs | MOQ | Datasheet | RFQ | |
|---|---|---|---|---|---|---|
| NV6152-RA Manufacturer: Navitas Semiconductor, Inc. Category: Power Driver Modules | MOSFET IPM 24-PWRVQFN | 1 | ||||
| GA100SICP12-227 Manufacturer: Navitas Semiconductor, Inc. Category: Power Driver Modules | IPM 1.2KV 100A SOT-227-4 | 1 | ||||
| GA50SICP12-227 Manufacturer: Navitas Semiconductor, Inc. Category: Power Driver Modules | IPM 1.2KV 50A SOT-227-4 | 1 | ||||
| GA10SICP12-247 Manufacturer: Navitas Semiconductor, Inc. Category: Power Driver Modules | IPM 1.2KV 10A TO-247-3 | 1 |
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