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| Attribute | Description |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | AR99 |
| HTSUS | 8541.29.0095 |
| Product Attribute | Attribute Value |
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Id - Continuous Drain Current: | 50 A |
| Rds On - Drain-Source Resistance: | 10 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Qg - Gate Charge: | 318 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 694 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Infineon Technologies |
| Product Type: | MOSFET |
| Factory Pack Quantity: | 750 |
| Subcategory: | MOSFETs |
| Part # Aliases: | IPDQ60R010S7A SP002063384 |