EPC2010
EPC|GANFET N-CH 200V 12A DIE
Manufacturer:EPC
Category:FETs, MOSFETs, Single FETs
Packaging:Standard
Condition:New
Original Packaging:Yes
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Pricing & AvailabilityUpdated: Recently
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Technical Specifications
Not Provided
Documents & Media
Applications & Features
Product Information:
| ReachStatus | REACH Unaffected |
|---|---|
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0040 |
Product Description
| FET Type | N-Channel |
|---|---|
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25��C | 12A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 5 V |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40��C ~ 125��C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
Other Details:
Not Provided