Exclusive promotion | 15% off for new customers | CODE: FIRST15
An ISO 9001:2015 Certified Entity
100% new and original products
Hassle-free returns
Fast & responsive customer support
Guaranteed worldwide delivery in 3 weeks**
Quality assurance
cghv35400f1 – MACOM Technology Solutions
Disclaimer: The image displayed serves as a mere illustration and does not provide precise specifications. For accurate details, We recommend referring to the official product data sheet.
Note: Price can vary and may be different depending on market and demand.
Request Quote
100% new and original products
Hassle-free returns
Fast & responsive customer support
Guaranteed worldwide delivery in 3 weeks**
Quality assurance
Product Details
| Description | RF MOSFET HEMT 50V 440226 |
|---|---|
| Detailed Description | Detailed DescriptionRF Mosfet 50 V 500 mA 2.9GHz ~ 3.5GHz 15dB 400W 440226 |
Product Attributes
| Product Attribute | Attribute Value |
| Manufacturer: | Wolfspeed |
| Product Category: | RF JFET Transistors |
| Shipping Restrictions: | This product may require additional documentation to export from the United States. |
| Transistor Type: | HEMT |
| Technology: | GaN |
| Operating Frequency: | 2.9 GHz to 3.5 GHz |
| Gain: | 11 dB |
| Transistor Polarity: | N-Channel |
| Vds – Drain-Source Breakdown Voltage: | 125 V |
| Vgs – Gate-Source Breakdown Voltage: | – 10 V, 2 V |
| Id – Continuous Drain Current: | 24 A |
| Output Power: | 400 W |
| Minimum Operating Temperature: | – 40 C |
| Maximum Operating Temperature: | + 125 C |
| Mounting Style: | Flange Mount |
| Package / Case: | 440225 |
| Brand: | Wolfspeed |
| Product Type: | RF JFET Transistors |
| Factory Pack Quantity: | 1 |
| Subcategory: | Transistors |
| Vgs th – Gate-Source Threshold Voltage: | 3 V |
Product Information
Semiconductor Product Description: CGHV35400F1
The CGHV35400F1 is a high-power gallium nitride (GaN) semiconductor device designed for a wide range of applications in the RF and microwave industry. This cutting-edge semiconductor offers unparalleled performance and efficiency, making it a standout choice in the market.
Key Features:
- High-power GaN technology for superior performance
- Low on-resistance for increased efficiency
- High breakdown voltage for reliable operation
- Compact and lightweight design for easy integration
Key Benefits:
- Enhanced power handling capabilities for demanding applications
- Improved efficiency leading to reduced power consumption
- Reliable operation in harsh environments
- Easy integration into existing systems for seamless upgrades
Applications:
The CGHV35400F1 is ideal for use in high-power RF amplifiers, radar systems, wireless communication devices, and other applications requiring high-frequency operation. Its advanced technology and robust design make it a versatile solution for various industries.
Performance Advantages:
With its high-power GaN technology, the CGHV35400F1 offers superior performance compared to traditional semiconductor devices. Its low on-resistance and high breakdown voltage ensure efficient power handling and reliable operation, even in challenging conditions.
Overall, the CGHV35400F1 stands out in the market for its exceptional performance, efficiency, and reliability, making it the top choice for high-power RF and microwave applications.
Additional Info
| Attribute | Description |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A001B3 |
| HTSUS | 8541.29.0075 |
Related Products